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Code for extracting mobility of 1-D FET like (semiconductor nanowire based) devices.

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Nanowire IV Data Analysis: Threshold Voltage, Contact Resistance & Mobility

Author: Mykola Chernyashevskyy
Affiliation: University of Pittsburgh, Department of Physics and Astronomy
Email: [email protected]


πŸ§ͺ Purpose

This notebook processes and analyzes current-voltage (IV) data from nanowire transport measurements. It extracts key device parameters such as:

  • Threshold Voltage (Vβ‚œ)
  • Contact Resistance (Rβ‚›)
  • Field-Effect Mobility (ΞΌ)

The analysis supports experiments involving semiconducting nanowires and their electrical properties as a function of gate voltage and bias.


πŸ—‚οΈ Data Preparation

πŸ“ Data Input

The user is prompted to:

  • Select a CSV file containing IVVI measurement output.
  • Scale data based on known conversion factors to convert raw units to volts and amperes.

⚠️ Important Notes:

  • Python uses 0-based indexing.
  • Ensure correct sign conventions when selecting back-gate voltage and current columns.

πŸ“Έ Reference images are provided in the notebook for selecting the correct scaling factors and data columns.


βš™οΈ Capacitance Estimation

  • Estimate the gate capacitance using SEM imaging of the nanowire contacts.
  • Reference a capacitance chart based on nanowire coating and substrate type (bare, CdTe, SiOx, HfOx).

πŸ’‘ Capacitance is used in calculating mobility via the fitted current equation.


πŸ“ Model and Fitting

βœ… Fit Equation

The notebook fits current vs. gate voltage to the following quadratic form:

$$ I = \mu C \frac{L}{V_{\text{bias}}} (V_{\text{g}} - V_{\text{th}})^2 + R_c $$

  • ΞΌ: Carrier mobility
  • C: Gate capacitance (estimated)
  • L: Contact spacing (from SEM)
  • Vbias: Source-drain bias
  • Vg: Gate voltage
  • Vth: Threshold voltage
  • Rc: Contact resistance

πŸ“¦ Fitting is done using scipy.optimize.curve_fit


πŸ“Š Outputs

  • Printed fit parameters:
    • Threshold Voltage (Vth)
    • Contact Resistance (Rc)
    • Mobility (ΞΌ)
  • Standard deviation errors (via covariance matrix)
  • Clean plots with IV traces and fitted curve

🐼 Additional Tools

  • The notebook includes a Pandas block for:
    • Inspecting and summarizing datasets
    • Exporting processed results if needed

πŸ“š References

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Code for extracting mobility of 1-D FET like (semiconductor nanowire based) devices.

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