Author: Mykola Chernyashevskyy
Affiliation: University of Pittsburgh, Department of Physics and Astronomy
Email: [email protected]
This notebook processes and analyzes current-voltage (IV) data from nanowire transport measurements. It extracts key device parameters such as:
- Threshold Voltage (Vβ)
- Contact Resistance (Rβ)
- Field-Effect Mobility (ΞΌ)
The analysis supports experiments involving semiconducting nanowires and their electrical properties as a function of gate voltage and bias.
The user is prompted to:
- Select a CSV file containing IVVI measurement output.
- Scale data based on known conversion factors to convert raw units to volts and amperes.
- Python uses 0-based indexing.
- Ensure correct sign conventions when selecting back-gate voltage and current columns.
πΈ Reference images are provided in the notebook for selecting the correct scaling factors and data columns.
- Estimate the gate capacitance using SEM imaging of the nanowire contacts.
- Reference a capacitance chart based on nanowire coating and substrate type (bare, CdTe, SiOx, HfOx).
π‘ Capacitance is used in calculating mobility via the fitted current equation.
The notebook fits current vs. gate voltage to the following quadratic form:
- ΞΌ: Carrier mobility
- C: Gate capacitance (estimated)
- L: Contact spacing (from SEM)
- Vbias: Source-drain bias
- Vg: Gate voltage
- Vth: Threshold voltage
- Rc: Contact resistance
π¦ Fitting is done using
scipy.optimize.curve_fit
- Printed fit parameters:
- Threshold Voltage (Vth)
- Contact Resistance (Rc)
- Mobility (ΞΌ)
- Standard deviation errors (via covariance matrix)
- Clean plots with IV traces and fitted curve
- The notebook includes a Pandas block for:
- Inspecting and summarizing datasets
- Exporting processed results if needed
- Transport modeling adapted from standard MOSFET theory
- Curve fitting:
scipy.optimize.curve_fit - Data handling:
pandas,numpy,matplotlib